Magnetization generated by microwave-induced Rashba interaction

O. Entin-Wohlman*, R. I. Shekhter, M. Jonson, A. Aharony

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We show that a controllable dc magnetization is accumulated in a junction comprising a quantum dot coupled to nonmagnetic reservoirs if the junction is subjected to a time-dependent spin-orbit interaction. The latter is induced by an ac electric field generated by microwave irradiation of the gated junction. The magnetization is caused by inelastic spin-flip scattering of electrons that tunnel through the junction, and depends on the polarization of the electric field: A circularly polarized field leads to the maximal effect, while there is no effect in a linearly polarized field. Furthermore, the magnetization increases as a step function (smoothened by temperature) as the microwave photon energy becomes larger than the absolute value of the difference between the single energy level on the quantum dot and the common chemical potential in the leads.

Original languageEnglish
Article number075419
JournalPhysical Review B
Volume102
Issue number7
DOIs
StatePublished - 15 Aug 2020

Funding

FundersFunder number
Zhejiang University, Hangzhou, China
Israel Science Foundation
Ministry of Science and Technology, Israel3-11173
PAZY FoundationIBS-R024-D1

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