TY - JOUR
T1 - Magnetization-driven metal-insulator transition in strongly disordered Ge:Mn magnetic semiconductors
AU - Riss, O.
AU - Gerber, A.
AU - Korenblit, I. Ya
AU - Suslov, A.
AU - Passacantando, M.
AU - Ottaviano, L.
PY - 2009/6/1
Y1 - 2009/6/1
N2 - We report on the temperature- and field-driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents, and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.
AB - We report on the temperature- and field-driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents, and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.
UR - http://www.scopus.com/inward/record.url?scp=67649976826&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.241202
DO - 10.1103/PhysRevB.79.241202
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AN - SCOPUS:67649976826
SN - 1098-0121
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
M1 - 241202
ER -