Magnetic versus hyperfine field in the anomalous Hall effect

H. Bednarski; V. Fleurov; I. D. Vagner

doi:10.1016/S0921-4526(98)00505-5

Magnetic versus hyperfine field in the anomalous Hall effect

H. Bednarski^*
, V. Fleurov
, I. D. Vagner

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered in the presence of the hyperfine field. The results obtained are essentially equivalent to those without the hyperfine field except for the appropriate modification of the electronic spin polarisation. Our calculation shows that it should be possible to observe the contact hyperfine interaction driven AHE in bulk semiconductors. The role of the hyperfine field is to leave the electronic spin polarisation constant and to enhance the splitting of the conduction band, thus competing with the applied external magnetic field in creating the magnetisation of the carriers. As an example, a quantitative calculation for InSb is presented.

Original language	English
Pages (from-to)	641-644
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	256-258
DOIs	https://doi.org/10.1016/S0921-4526(98)00505-5
State	Published - 2 Dec 1998

Funding

Funders	Funder number
German–Israeli Foundation for Scientific Research and Development	G 0456-220.07/95

Keywords

Anomalous Hall effect
Hyperfine interactions
Spin-orbit interaction

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10.1016/S0921-4526(98)00505-5

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title = "Magnetic versus hyperfine field in the anomalous Hall effect",

abstract = "The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered in the presence of the hyperfine field. The results obtained are essentially equivalent to those without the hyperfine field except for the appropriate modification of the electronic spin polarisation. Our calculation shows that it should be possible to observe the contact hyperfine interaction driven AHE in bulk semiconductors. The role of the hyperfine field is to leave the electronic spin polarisation constant and to enhance the splitting of the conduction band, thus competing with the applied external magnetic field in creating the magnetisation of the carriers. As an example, a quantitative calculation for InSb is presented.",

keywords = "Anomalous Hall effect, Hyperfine interactions, Spin-orbit interaction",

author = "H. Bednarski and V. Fleurov and Vagner, \{I. D.\}",

note = "Funding Information: V.F. and I.V. acknowledge support by a grant from the German–Israeli Foundation for Scientific Research and Development, number G 0456-220.07/95. ",

year = "1998",

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doi = "10.1016/S0921-4526(98)00505-5",

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T1 - Magnetic versus hyperfine field in the anomalous Hall effect

AU - Bednarski, H.

AU - Fleurov, V.

AU - Vagner, I. D.

N1 - Funding Information: V.F. and I.V. acknowledge support by a grant from the German–Israeli Foundation for Scientific Research and Development, number G 0456-220.07/95.

PY - 1998/12/2

Y1 - 1998/12/2

N2 - The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered in the presence of the hyperfine field. The results obtained are essentially equivalent to those without the hyperfine field except for the appropriate modification of the electronic spin polarisation. Our calculation shows that it should be possible to observe the contact hyperfine interaction driven AHE in bulk semiconductors. The role of the hyperfine field is to leave the electronic spin polarisation constant and to enhance the splitting of the conduction band, thus competing with the applied external magnetic field in creating the magnetisation of the carriers. As an example, a quantitative calculation for InSb is presented.

AB - The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered in the presence of the hyperfine field. The results obtained are essentially equivalent to those without the hyperfine field except for the appropriate modification of the electronic spin polarisation. Our calculation shows that it should be possible to observe the contact hyperfine interaction driven AHE in bulk semiconductors. The role of the hyperfine field is to leave the electronic spin polarisation constant and to enhance the splitting of the conduction band, thus competing with the applied external magnetic field in creating the magnetisation of the carriers. As an example, a quantitative calculation for InSb is presented.

KW - Anomalous Hall effect

KW - Hyperfine interactions

KW - Spin-orbit interaction

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VL - 256-258

SP - 641

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Magnetic versus hyperfine field in the anomalous Hall effect

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