Magnetic versus hyperfine field in the anomalous Hall effect

H. Bednarski*, V. Fleurov, I. D. Vagner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The anomalous Hall effect (AHE) in nonmagnetic semiconductors is considered in the presence of the hyperfine field. The results obtained are essentially equivalent to those without the hyperfine field except for the appropriate modification of the electronic spin polarisation. Our calculation shows that it should be possible to observe the contact hyperfine interaction driven AHE in bulk semiconductors. The role of the hyperfine field is to leave the electronic spin polarisation constant and to enhance the splitting of the conduction band, thus competing with the applied external magnetic field in creating the magnetisation of the carriers. As an example, a quantitative calculation for InSb is presented.

Original languageEnglish
Pages (from-to)641-644
Number of pages4
JournalPhysica B: Condensed Matter
StatePublished - 2 Dec 1998


  • Anomalous Hall effect
  • Hyperfine interactions
  • Spin-orbit interaction


Dive into the research topics of 'Magnetic versus hyperfine field in the anomalous Hall effect'. Together they form a unique fingerprint.

Cite this