Low-threshold room-temperature embedded heterostructure lasers

C. P. Lee; I. Samid; A. Gover; A. Yariv

doi:10.1063/1.89081

Low-threshold room-temperature embedded heterostructure lasers

C. P. Lee^*, I. Samid, A. Gover, A. Yariv

^*Corresponding author for this work

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm² have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.

Original language	English
Pages (from-to)	365-367
Number of pages	3
Journal	Applied Physics Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1063/1.89081
State	Published - 1976
Externally published	Yes

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title = "Low-threshold room-temperature embedded heterostructure lasers",

abstract = "Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.",

author = "Lee, {C. P.} and I. Samid and A. Gover and A. Yariv",

year = "1976",

doi = "10.1063/1.89081",

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AB - Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.

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JO - Applied Physics Letters

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Low-threshold room-temperature embedded heterostructure lasers

Abstract

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