Low-temperature transport properties of (formula presented) thin films

M. Giannouri, C. Papastaikoudis, Ralph Rosenbaum

Research output: Contribution to journalArticlepeer-review


Detailed measurements of the transverse magnetoresistance of disordered (Formula presented) thin films were performed above the transition temperature (Formula presented) as a function of temperature and magnetic field. The temperature dependence of the observed magnetoresistance is interpreted in terms of weak localization and superconducting fluctuations. Besides the weak localization, the Aslamazov-Larkin and the Maki-Thompson-Larkin fluctuations processes were included into the fitting procedure. Values of Larkin electron-electron interaction strength parameter (Formula presented) and the total phase-breaking rate (Formula presented) were obtained from the magnetoresistance fits.

Original languageEnglish
Pages (from-to)4463-4469
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number6
StatePublished - 1999


Dive into the research topics of 'Low-temperature transport properties of (formula presented) thin films'. Together they form a unique fingerprint.

Cite this