Low-temperature electronic transport properties of W, Mo, Ta, and Zr thin films

R. Rosenbaum*, M. Ben-Shlomo, S. Goldsmith, R. L. Boxman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Thin films of the refractory metals W, Mo, and Ta and the metal Zr were deposited upon glass substrates by use of a vacuum arc chamber. The electronic transport properties including magnetoconductance and resistance versus temperature were measured in the temperature regime between 2 and 30 K and in perpendicular magnetic fields up to 7 T. At liquid-helium temperatures, the W, Mo, and Zr films exhibited superconducting fluctuations in the resistance. The W and Mo films had superconducting zero-resistance temperature transitions at 2.75 K, while the Zr film had an estimated transition temperature near 1 K. In contrast, the Ta film exhibited weak localization and electron-electron interaction effects at liquid-helium temperatures with a logarithmic increase in its resistance at decreasing temperatures. Values for the inelastic scattering times were obtained from the magnetoconductance measurements. All of the films had strong spin-orbit scattering.

Original languageEnglish
Pages (from-to)10009-10019
Number of pages11
JournalPhysical Review B-Condensed Matter
Volume39
Issue number14
DOIs
StatePublished - 1989

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