Low-dose implantation of Sb in Si_1-xGe_x epitaxial layers: Correlation between electrical properties and radiation damage

Keyphrases

• Electrical Properties 100%
• Si1-xGex 100%
• P-type 100%
• Epitaxial Layers 100%
• Layer Similarity 100%
• Radiation Damage 100%
• Ge Content 100%
• Property Damage 100%
• Alloy Layer 100%
• Room Temperature 50%
• Monte Carlo Simulation 50%
• Epitaxially Grown 50%
• Annealing 50%
• Electronic Structure 50%
• P-type Doping 50%
• Si(111) 50%
• Amorphization 50%
• Hall Effect Measurement 50%
• Si (100) Substrate 50%
• Si1-xGex Alloy 50%
• Spreading Resistance Profiling 50%
• Rutherford Backscattering 50%
• Implanted Ions 50%
• High Temperature Anneal 50%

Material Science

• Epitaxial Layer 100%
• Radiation Damage 100%
• Electronic Structure 50%
• Amorphization 50%