Localized rapid heating by low-power solid-state microwave drill

Yehuda Meir*, Eli Jerby

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

This paper presents a theoretical and experimental study of a locally induced microwave-heating effect implemented by a low-power transistor-based microwave drill. A coupled thermal-electromagnetic model shows that the thermal-runaway instability can be excited also by relatively low microwave power, in the range ∼10-100W, hence by solid-state sources rather than magnetrons. Local melting then occurs in a millimeter scale within seconds in various materials, such as glass, ceramics, basalts, and plastics. The experimental device employs an LDMOS transistor in an oscillator scheme, feeding a miniature microwave-drill applicator. The experimental results verify the rapid heating effect, similarly to the theoretical model. These findings may lead to various material-processing applications of local microwave heating implemented by solid-state devices, including local melting (for surface treatments, chemical reactions, joining, etc.), delicate drilling (e.g., of bones in orthopedic operations), local evaporation, ignition, and plasma ejection (e.g., in microwave-induced breakdown spectroscopy (MIBS) for material identification).

Original languageEnglish
Article number6214998
Pages (from-to)2665-2672
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number8
DOIs
StatePublished - 2012

Keywords

  • Hotspots
  • laterally diffused metal-oxide semiconductor field-effect tranLDMOS-FET
  • microwave drills
  • microwave heating
  • thermal-runaway instabilities

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