TY - JOUR
T1 - Local oscillations of on-die supply voltage a reliability issue
AU - Gurfinkel, Moshe
AU - Livshits, Pavel
AU - Rozen, Anton
AU - Fefer, Yefim
AU - Bernstein, Joseph B.
AU - Shapira, Yoram
PY - 2009/9
Y1 - 2009/9
N2 - On-die measurements of $V-{\rm DD}$ and $V-{\rm SS}$ voltages inside a 90-nm VLSI technology chip are presented. The results show local fluctuations in the $V-{\rm DD}$ and $V-{\rm SS}$ voltages with amplitudes that can reach, in severe cases, more than 10% of $V-{\rm DD}$. These fluctuations can distort analog signals, cause immediate logic faults, and also aggravate other reliability wear-out mechanisms. Both measurements and simulations predict the aggravation of this phenomenon for future technologies.
AB - On-die measurements of $V-{\rm DD}$ and $V-{\rm SS}$ voltages inside a 90-nm VLSI technology chip are presented. The results show local fluctuations in the $V-{\rm DD}$ and $V-{\rm SS}$ voltages with amplitudes that can reach, in severe cases, more than 10% of $V-{\rm DD}$. These fluctuations can distort analog signals, cause immediate logic faults, and also aggravate other reliability wear-out mechanisms. Both measurements and simulations predict the aggravation of this phenomenon for future technologies.
KW - Power-distribution network
KW - Reliability
KW - Supply-noise measurement
UR - http://www.scopus.com/inward/record.url?scp=70249144020&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2009.2025955
DO - 10.1109/TDMR.2009.2025955
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AN - SCOPUS:70249144020
SN - 1530-4388
VL - 9
SP - 476
EP - 482
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 3
M1 - 5153317
ER -