Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy

S. Saraf; Y. Rosenwaks

doi:10.1016/j.susc.2004.10.042

Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy

S. Saraf, Y. Rosenwaks

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p ⁺⁺n or n ⁺⁺p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip-sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 × 10 ¹⁰ q cm ^-2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.

Original language	English
Pages (from-to)	L35-L39
Journal	Surface Science
Volume	574
Issue number	2-3
DOIs	https://doi.org/10.1016/j.susc.2004.10.042
State	Published - 10 Jan 2005

Keywords

Kelvin Probe force microscopy
Semiconductor surface
Surface band bending
Surface charge
Surface potential
Surface states

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10.1016/j.susc.2004.10.042

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title = "Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy",

abstract = "We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p ++n or n ++p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip-sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 × 10 10 q cm -2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.",

keywords = "Kelvin Probe force microscopy, Semiconductor surface, Surface band bending, Surface charge, Surface potential, Surface states",

author = "S. Saraf and Y. Rosenwaks",

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doi = "10.1016/j.susc.2004.10.042",

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AU - Rosenwaks, Y.

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N2 - We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p ++n or n ++p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip-sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 × 10 10 q cm -2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.

AB - We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p ++n or n ++p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip-sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 × 10 10 q cm -2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.

KW - Kelvin Probe force microscopy

KW - Semiconductor surface

KW - Surface band bending

KW - Surface charge

KW - Surface potential

KW - Surface states

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VL - 574

SP - L35-L39

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy

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Keywords

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