Local doping of silicon by a point-contact microwave applicator

P. Livshits, V. Dikhtyar, A. Inberg, A. Shahadi, E. Jerby*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The feasibility of local doping in silicon by an open-end coaxial applicator with a tip made of the doping material, e.g. aluminum or silver, is studied in this paper. In these experiments, localized microwave power of 100-350 W at 2.45 GHz was applied for ∼1 min to obtain doped regions of ∼1-mm width and ∼0.3-μm depth. Independent measurements of secondary ion mass spectroscopy (SIMS) and junction built-in potential measured by atomic-force microscopy (AFM) were used to estimate the activated doping concentrations in the order of 1019 and 1022 cm -3 for aluminum and silver doping, respectively. Potential barriers (pn junctions) of 0.5-0.7 V were measured across the aluminum-doped regions, and I-V characteristics were observed. The doping experiments were conducted in air atmosphere, hence oxidation effects were observed as well. The localized-microwave doping concept presented here could be useful in small-scale semiconductor processes, integrated optics, and MEMS applications.

Original languageEnglish
Pages (from-to)2831-2836
Number of pages6
JournalMicroelectronic Engineering
Volume88
Issue number9
DOIs
StatePublished - Sep 2011

Funding

FundersFunder number
Israel Science Foundation1270/04

    Keywords

    • Microwaves
    • Silicon doping
    • Silicon thermal processing
    • Thermal-runaway
    • pn junctions

    Fingerprint

    Dive into the research topics of 'Local doping of silicon by a point-contact microwave applicator'. Together they form a unique fingerprint.

    Cite this