TY - JOUR
T1 - Local doping of silicon by a point-contact microwave applicator
AU - Livshits, P.
AU - Dikhtyar, V.
AU - Inberg, A.
AU - Shahadi, A.
AU - Jerby, E.
N1 - Funding Information:
We thank Mr. I. Torchinsky for the AFM measurements, and Professors N. Croitoru, E. Glickman, E. Grunbaum, S. Krilov, A. Ruzin, and D.J. Chadi for helpful discussions. This research was supported by The Israel Science Foundation (Grant No. 1270/04 ). The authors request to dedicate this work to the memory of the late Dr. Vladimir Dikhtyar, who contributed significantly to this study and to other scientific and technological developments as well.
PY - 2011/9
Y1 - 2011/9
N2 - The feasibility of local doping in silicon by an open-end coaxial applicator with a tip made of the doping material, e.g. aluminum or silver, is studied in this paper. In these experiments, localized microwave power of 100-350 W at 2.45 GHz was applied for ∼1 min to obtain doped regions of ∼1-mm width and ∼0.3-μm depth. Independent measurements of secondary ion mass spectroscopy (SIMS) and junction built-in potential measured by atomic-force microscopy (AFM) were used to estimate the activated doping concentrations in the order of 1019 and 1022 cm -3 for aluminum and silver doping, respectively. Potential barriers (pn junctions) of 0.5-0.7 V were measured across the aluminum-doped regions, and I-V characteristics were observed. The doping experiments were conducted in air atmosphere, hence oxidation effects were observed as well. The localized-microwave doping concept presented here could be useful in small-scale semiconductor processes, integrated optics, and MEMS applications.
AB - The feasibility of local doping in silicon by an open-end coaxial applicator with a tip made of the doping material, e.g. aluminum or silver, is studied in this paper. In these experiments, localized microwave power of 100-350 W at 2.45 GHz was applied for ∼1 min to obtain doped regions of ∼1-mm width and ∼0.3-μm depth. Independent measurements of secondary ion mass spectroscopy (SIMS) and junction built-in potential measured by atomic-force microscopy (AFM) were used to estimate the activated doping concentrations in the order of 1019 and 1022 cm -3 for aluminum and silver doping, respectively. Potential barriers (pn junctions) of 0.5-0.7 V were measured across the aluminum-doped regions, and I-V characteristics were observed. The doping experiments were conducted in air atmosphere, hence oxidation effects were observed as well. The localized-microwave doping concept presented here could be useful in small-scale semiconductor processes, integrated optics, and MEMS applications.
KW - Microwaves
KW - Silicon doping
KW - Silicon thermal processing
KW - Thermal-runaway
KW - pn junctions
UR - http://www.scopus.com/inward/record.url?scp=80051551405&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2011.04.022
DO - 10.1016/j.mee.2011.04.022
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AN - SCOPUS:80051551405
SN - 0167-9317
VL - 88
SP - 2831
EP - 2836
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 9
ER -