Liquid phase epitaxy of Pb1-xEuxTe thin films

A. Hacham*, U. El-Hanany, S. Rotter, Yoram Shapira

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Epitaxial layers of Pb1-xEuxTe with x<0.06 have been grown for the first time using liquid phase epitaxy. The epitaxy was done from Te-rich solutions since the commonly used Pb solutions, which exothermally form Pb-Eu intermetallics, cannot be used to grow this compound. The basic growth parameters and conditions were investigated. The results show that the incorporation of Eu into PbTe lattice is an endothermal process, with an activation energy of 1.0 eV. The reported technique yields device quality layers showing flat surfaces and sharp interfaces.

Original languageEnglish
Pages (from-to)108-110
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number2
DOIs
StatePublished - 1988

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