Abstract
The fabrication of the light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenantholine)3 was presented. The effect of electron transport layer of tris-(8-hydroxyquinoline) aluminum on the device response rate and efficiency was also analyzed. Surface photovoltage spectroscopy was used to determine the charge transporting characteristics. The results show that enhanced electron injection at the interface led to improved device time and efficiency.
Original language | English |
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Pages (from-to) | 6391-6395 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 10 |
DOIs | |
State | Published - 15 Nov 2003 |