Large-scale fabrication of 4-nm-channel vertical protein-based ambipolar transistors

Elad D. Mentovich, Bogdan Belgorodsky, Itsik Kalifa, Hagai Cohen, Shachar Richter

Research output: Contribution to journalArticlepeer-review

Abstract

We suggest a universal method for the mass production of nanometer-sized molecular transistors. This vertical-type device was fabricated using conventional photolithography and self-assembly methods and was processed in parallel fashion. We used this transistor to investigate the transport properties of a single layer of bovine serum albumin protein. This 4-nm-channel device exhibits low operating voltages, ambipolar behavior, and high gate sensitivity. The operation mechanism of this new device is suggested, and the charge transfer through the protein layer was explored.

Original languageEnglish
Pages (from-to)1296-1300
Number of pages5
JournalNano Letters
Volume9
Issue number4
DOIs
StatePublished - 8 Apr 2009

Fingerprint

Dive into the research topics of 'Large-scale fabrication of 4-nm-channel vertical protein-based ambipolar transistors'. Together they form a unique fingerprint.

Cite this