TY - GEN
T1 - Large displacement low voltage multistable micro actuator
AU - Gerson, Y.
AU - Krylov, S.
AU - Ilic, B.
AU - Schreiber, D.
PY - 2008
Y1 - 2008
N2 - This paper presents the modeling, design, fabrication and characterization of electrostatic large displacement multistable micro actuators. The device incorporates multiple serially connected bistable elements realized as shallow curved beams of slightly varying length. Loaded by an increasing force provided by an electrostatic comb drive transducer, the device undergoes a sequence of snap-through events and exhibits multiple stable equilibrium configurations at the same voltage. A Reduced Order (RO) model built using the Rayleigh-Ritz procedure as well as a nonlinear Finite Element (FE) analysis were used in order to predict the actuator behavior and evaluate design parameters. Devices of four different configurations were fabricated by a Deep Reactive Ion Etching (DRIE) based process using silicon on insulator (SOI) wafers. Experimental results demonstrate that the multistable devices exhibit stable displacement of 90μm while four snap-through and snap-back events take place during loading and unloading respectively. Experimental results are found to be in good agreement with the theoretical predictions.
AB - This paper presents the modeling, design, fabrication and characterization of electrostatic large displacement multistable micro actuators. The device incorporates multiple serially connected bistable elements realized as shallow curved beams of slightly varying length. Loaded by an increasing force provided by an electrostatic comb drive transducer, the device undergoes a sequence of snap-through events and exhibits multiple stable equilibrium configurations at the same voltage. A Reduced Order (RO) model built using the Rayleigh-Ritz procedure as well as a nonlinear Finite Element (FE) analysis were used in order to predict the actuator behavior and evaluate design parameters. Devices of four different configurations were fabricated by a Deep Reactive Ion Etching (DRIE) based process using silicon on insulator (SOI) wafers. Experimental results demonstrate that the multistable devices exhibit stable displacement of 90μm while four snap-through and snap-back events take place during loading and unloading respectively. Experimental results are found to be in good agreement with the theoretical predictions.
UR - http://www.scopus.com/inward/record.url?scp=50149100720&partnerID=8YFLogxK
U2 - 10.1109/MEMSYS.2008.4443693
DO - 10.1109/MEMSYS.2008.4443693
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AN - SCOPUS:50149100720
SN - 9781424417933
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 463
EP - 466
BT - MEMS 2008 Tucson - 21st IEEE International Conference on Micro Electro Mechanical Systems
T2 - 21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 Tucson
Y2 - 13 January 2008 through 17 January 2008
ER -