Ku-band to F-band active multiplier chain in 65-nm CMOS

Bassam Khamaisi, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of +8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.

Original languageEnglish
Title of host publicationEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-96
Number of pages4
ISBN (Electronic)9782874870446
DOIs
StatePublished - 7 Dec 2016
Event11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom
Duration: 3 Oct 20164 Oct 2016

Publication series

NameEuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Conference

Conference11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/TerritoryUnited Kingdom
CityLondon
Period3/10/164/10/16

Keywords

  • CMOS
  • F-band
  • F-band Power Amplifier
  • Frequency Multiplier
  • Ku-band
  • MM-Wave

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