Ku-band to F-band active multiplier chain in 65-nm CMOS

Bassam Khamaisi; Eran Socher

doi:10.1109/EuMIC.2016.7777498

Ku-band to F-band active multiplier chain in 65-nm CMOS

Bassam Khamaisi, Eran Socher

School of Electrical Engineering

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of +8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-96
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777498
State	Published - 7 Dec 2016
Event	11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 3 Oct 2016 → 4 Oct 2016

Publication series

Name	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Conference

Conference	11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/Territory	United Kingdom
City	London
Period	3/10/16 → 4/10/16

Keywords

CMOS
F-band
F-band Power Amplifier
Frequency Multiplier
Ku-band
MM-Wave

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10.1109/EuMIC.2016.7777498

Cite this

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title = "Ku-band to F-band active multiplier chain in 65-nm CMOS",

abstract = "A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of +8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.",

keywords = "CMOS, F-band, F-band Power Amplifier, Frequency Multiplier, Ku-band, MM-Wave",

author = "Bassam Khamaisi and Eran Socher",

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year = "2016",

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doi = "10.1109/EuMIC.2016.7777498",

language = "אנגלית",

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Khamaisi, B & Socher, E 2016, Ku-band to F-band active multiplier chain in 65-nm CMOS. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777498, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 93-96, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 3/10/16. https://doi.org/10.1109/EuMIC.2016.7777498

Ku-band to F-band active multiplier chain in 65-nm CMOS. / Khamaisi, Bassam; Socher, Eran.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 93-96 7777498 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Socher, Eran

PY - 2016/12/7

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N2 - A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of +8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.

AB - A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of +8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.

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KW - Ku-band

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Ku-band to F-band active multiplier chain in 65-nm CMOS

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Keywords

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