Key components of a 130 GHz dicke-radiometer SiGe RFIC

Evgeny Shumakher*, Jenia Elkind, Danny Elad

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the design and characterization results of the key components of calibrated passive radiometer (Dicke-radiometer) operating in the low D-band (around 130 GHz) and realized in IBM's standard 0.12-um SiGe BiCMOS technology (IBM8HP, fT /fMAX =180/220 GHz). Several perspective candidates for the Dicke-switch, the low-noise amplifier and the square-law detector have been designed and characterized, obtaining fair agreement between the measured and the simulated performance.

Original languageEnglish
Title of host publication2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages255-257
Number of pages3
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States
Duration: 21 Jan 201323 Jan 2013

Publication series

Name2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

Conference

Conference2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
Country/TerritoryUnited States
CityAustin, TX
Period21/01/1323/01/13

Keywords

  • Low-noise amplifier
  • Microwave imaging
  • Microwave radiometry
  • Millimeter wave integrated circuits
  • Silicon germanium

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