Abstract
The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions with the substrate increases resistivity of a normal contact to single-crystal silicon by many orders of magnitude. The specific resistance of a typical aluminum contact to heavily doped n-type silicon increases from 10-6-10-5 to 1-10 Ω-cm2 at room temperature. Applying a sufficiently high voltage induces an irreversible transformation of the device into a low-resistance state. The postprogramming resistance can be as low as 100 Ω for a 3 × 3-μm2 contact at room temperature.
Original language | English |
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Pages (from-to) | 180-182 |
Number of pages | 3 |
Journal | Electron device letters |
Volume | v |
Issue number | n |
State | Published - 1992 |
Externally published | Yes |