IPEL - a novel ion-implanted electrically programmable element

Yosi Shacham-Diamand*, Alex Sinar, Eric Sirkin, Ilan Blech, Levy Gerzberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions with the substrate increases resistivity of a normal contact to single-crystal silicon by many orders of magnitude. The specific resistance of a typical aluminum contact to heavily doped n-type silicon increases from 10-6-10-5 to 1-10 Ω-cm2 at room temperature. Applying a sufficiently high voltage induces an irreversible transformation of the device into a low-resistance state. The postprogramming resistance can be as low as 100 Ω for a 3 × 3-μm2 contact at room temperature.

Original languageEnglish
Pages (from-to)180-182
Number of pages3
JournalElectron device letters
Volumev
Issue numbern
StatePublished - 1992
Externally publishedYes

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