@article{02a5248a06b74a258d827c009d636dae,
title = "Ionizing radiation effects on non volatile read only memory cells",
abstract = "Threshold voltage (Vth) and drain-source current (I DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of IDS with the total irradiation dose. A brief physical explanation is also provided.",
keywords = "Flash memories, nitride read-only memories (NROM), oxide/nitride/oxide (ONO), radiation hardness",
author = "Sebania Libertino and Domenico Corso and Michael Lisiansky and Yakov Roizin and Felix Palumbo and Fabio Principato and Calogero Pace and Paolo Finocchiaro and Salvatore Lombardo",
note = "Funding Information: Manuscript received July 12, 2012; revised September 05, 2012; accepted September 12, 2012. Date of publication October 25, 2012; date of current version December 11, 2012. This work was supported by “con il contributo del Ministero degli Affari Esteri, Direzione Generale per la Promozione del Sistema Paese” through the Progetto di Grande Rilevanza Italia—Argentina “Caratter-izzazione durante e post-irraggiamento di dispositivi microelettronici per appli-cazioni avioniche o spaziali.”.",
year = "2012",
doi = "10.1109/TNS.2012.2219071",
language = "אנגלית",
volume = "59",
pages = "3016--3020",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}