Ionizing radiation effects on non volatile read only memory cells

Sebania Libertino*, Domenico Corso, Michael Lisiansky, Yakov Roizin, Felix Palumbo, Fabio Principato, Calogero Pace, Paolo Finocchiaro, Salvatore Lombardo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Threshold voltage (Vth) and drain-source current (I DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of IDS with the total irradiation dose. A brief physical explanation is also provided.

Original languageEnglish
Article number6340370
Pages (from-to)3016-3020
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - 2012
Externally publishedYes


  • Flash memories
  • nitride read-only memories (NROM)
  • oxide/nitride/oxide (ONO)
  • radiation hardness


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