Threshold voltage (Vth) and drain-source current (I DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of IDS with the total irradiation dose. A brief physical explanation is also provided.
- Flash memories
- nitride read-only memories (NROM)
- oxide/nitride/oxide (ONO)
- radiation hardness