Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces

A. Amirav; Mark J. Cardillo

doi:10.1016/0039-6028(88)90480-3

Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces

A. Amirav, Mark J. Cardillo

Research output: Contribution to journal › Article › peer-review

Abstract

We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 < E_i < 20 eV. We observe Ga⁺ from GaAs(110), In⁺ from InP(100), and alkali and other impurity ions from all surfaces. At E_i = 16 eV the ion emission probability for In⁺ reaches 1 × 10^-3. The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6.5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission due to hyperthermal Xe scattering.

Original language	English
Pages (from-to)	192-206
Number of pages	15
Journal	Surface Science
Volume	198
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(88)90480-3
State	Published - 1988
Externally published	Yes

Access to Document

10.1016/0039-6028(88)90480-3

Cite this

@article{bf819bfb7e6240138ec06358ee0bf063,

title = "Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces",

abstract = "We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 < Ei < 20 eV. We observe Ga+ from GaAs(110), In+ from InP(100), and alkali and other impurity ions from all surfaces. At Ei = 16 eV the ion emission probability for In+ reaches 1 × 10-3. The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6.5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission due to hyperthermal Xe scattering.",

author = "A. Amirav and Cardillo, {Mark J.}",

year = "1988",

doi = "10.1016/0039-6028(88)90480-3",

language = "אנגלית",

volume = "198",

pages = "192--206",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces

AU - Amirav, A.

AU - Cardillo, Mark J.

PY - 1988

Y1 - 1988

N2 - We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 < Ei < 20 eV. We observe Ga+ from GaAs(110), In+ from InP(100), and alkali and other impurity ions from all surfaces. At Ei = 16 eV the ion emission probability for In+ reaches 1 × 10-3. The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6.5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission due to hyperthermal Xe scattering.

AB - We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 < Ei < 20 eV. We observe Ga+ from GaAs(110), In+ from InP(100), and alkali and other impurity ions from all surfaces. At Ei = 16 eV the ion emission probability for In+ reaches 1 × 10-3. The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6.5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission due to hyperthermal Xe scattering.

UR - http://www.scopus.com/inward/record.url?scp=4243629875&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(88)90480-3

DO - 10.1016/0039-6028(88)90480-3

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:4243629875

VL - 198

SP - 192

EP - 206

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -

Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this