Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces

A. Amirav, Mark J. Cardillo

Research output: Contribution to journalArticlepeer-review

Abstract

We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 < Ei < 20 eV. We observe Ga+ from GaAs(110), In+ from InP(100), and alkali and other impurity ions from all surfaces. At Ei = 16 eV the ion emission probability for In+ reaches 1 × 10-3. The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6.5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission due to hyperthermal Xe scattering.

Original languageEnglish
Pages (from-to)192-206
Number of pages15
JournalSurface Science
Volume198
Issue number1-2
DOIs
StatePublished - 1988
Externally publishedYes

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