Investigation of InP surface and metal interfaces by surface photovoltage and Auger electron spectroscopies

Y. Shapira, L. J. Brillson, A. Heller

Research output: Contribution to journalArticlepeer-review

Abstract

We have used surface photovoltage spectroscopy (SPS) and Auger electron spectroscopy (AES) to investigate the extrinsic surface states produced within the InP band gap by a variety of wet chemical treatments as well as by UHV metal chemisorption, oxidation, and Ar+ bombardment. UHV-cleaved surfaces display no intrinsic surface states, only extrinsic states associated with an excess of surface P. We have attempted to correlate the various SPS features with the chemical composition of these surfaces, particularly with KAg(CN)-2-treated surfaces, for which the surface recombination velocity on p-InP is known to decrease significantly.

Original languageEnglish
Pages (from-to)766-770
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume1
Issue number2
DOIs
StatePublished - Apr 1983

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