Investigation of contact metal stacks for submicron GaN HEMT

Y. Knafo; I. Toledo; I. Hallakoun; J. Kaplun; G. Bunin; T. Baksht; B. Hadad; Yoram Shapira

Investigation of contact metal stacks for submicron GaN HEMT

Y. Knafo^*, I. Toledo, I. Hallakoun, J. Kaplun, G. Bunin, T. Baksht, B. Hadad, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Encapsulated Ti/Al/Ni/Au metal stack for Ohmic contacts and TaN vs. Ni for Schottky contacts for submicron GaN HEMTs have been investigated. The results show that the composition of the SiNx encapsulation layer is a dominant factor, affecting metal morphology, edge definition and e-beam lithography alignment mark detection. The results show that TaN can be used as a Schottky gate at very high temperature applications, but Ni has superior barrier height and it is stable at 300°C.

Original language	English
Title of host publication	2005 International Conference on Compound Semiconductor Manufacturing Technology
State	Published - 2005
Event	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 - New Orleans, LA, United States Duration: 11 Apr 2005 → 14 Apr 2005

Publication series

Name	2005 International Conference on Compound Semiconductor Manufacturing Technology

Conference

Conference	2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005
Country/Territory	United States
City	New Orleans, LA
Period	11/04/05 → 14/04/05

Keywords

GaN HEMT
Ohmic contacts
Schottky contacts

Cite this

@inproceedings{81a69b94fb57416a83d76140bcdd1881,

title = "Investigation of contact metal stacks for submicron GaN HEMT",

abstract = "Encapsulated Ti/Al/Ni/Au metal stack for Ohmic contacts and TaN vs. Ni for Schottky contacts for submicron GaN HEMTs have been investigated. The results show that the composition of the SiNx encapsulation layer is a dominant factor, affecting metal morphology, edge definition and e-beam lithography alignment mark detection. The results show that TaN can be used as a Schottky gate at very high temperature applications, but Ni has superior barrier height and it is stable at 300°C.",

keywords = "GaN HEMT, Ohmic contacts, Schottky contacts",

author = "Y. Knafo and I. Toledo and I. Hallakoun and J. Kaplun and G. Bunin and T. Baksht and B. Hadad and Yoram Shapira",

year = "2005",

language = "אנגלית",

isbn = "1893580067",

series = "2005 International Conference on Compound Semiconductor Manufacturing Technology",

booktitle = "2005 International Conference on Compound Semiconductor Manufacturing Technology",

note = "2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005 ; Conference date: 11-04-2005 Through 14-04-2005",

}

Knafo, Y, Toledo, I, Hallakoun, I, Kaplun, J, Bunin, G, Baksht, T, Hadad, B & Shapira, Y 2005, Investigation of contact metal stacks for submicron GaN HEMT. in 2005 International Conference on Compound Semiconductor Manufacturing Technology. 2005 International Conference on Compound Semiconductor Manufacturing Technology, 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005, New Orleans, LA, United States, 11/04/05.

Investigation of contact metal stacks for submicron GaN HEMT. / Knafo, Y.; Toledo, I.; Hallakoun, I. et al.
2005 International Conference on Compound Semiconductor Manufacturing Technology. 2005. (2005 International Conference on Compound Semiconductor Manufacturing Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of contact metal stacks for submicron GaN HEMT

AU - Knafo, Y.

AU - Toledo, I.

AU - Hallakoun, I.

AU - Kaplun, J.

AU - Bunin, G.

AU - Baksht, T.

AU - Hadad, B.

AU - Shapira, Yoram

PY - 2005

Y1 - 2005

N2 - Encapsulated Ti/Al/Ni/Au metal stack for Ohmic contacts and TaN vs. Ni for Schottky contacts for submicron GaN HEMTs have been investigated. The results show that the composition of the SiNx encapsulation layer is a dominant factor, affecting metal morphology, edge definition and e-beam lithography alignment mark detection. The results show that TaN can be used as a Schottky gate at very high temperature applications, but Ni has superior barrier height and it is stable at 300°C.

AB - Encapsulated Ti/Al/Ni/Au metal stack for Ohmic contacts and TaN vs. Ni for Schottky contacts for submicron GaN HEMTs have been investigated. The results show that the composition of the SiNx encapsulation layer is a dominant factor, affecting metal morphology, edge definition and e-beam lithography alignment mark detection. The results show that TaN can be used as a Schottky gate at very high temperature applications, but Ni has superior barrier height and it is stable at 300°C.

KW - GaN HEMT

KW - Ohmic contacts

KW - Schottky contacts

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AN - SCOPUS:84887382551

SN - 1893580067

SN - 9781893580060

T3 - 2005 International Conference on Compound Semiconductor Manufacturing Technology

BT - 2005 International Conference on Compound Semiconductor Manufacturing Technology

T2 - 2005 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2005

Y2 - 11 April 2005 through 14 April 2005

ER -

Investigation of contact metal stacks for submicron GaN HEMT

Abstract

Publication series

Conference

Keywords

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