Intermediately bound excitons in wurtzit type semiconductors doped with transition metal impurities

P. Dahan*, V. Fleurov, K. A. Kikoin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A possibility of intermediately bound excitons in semiconductors doped with transition metal impurities is considered. These sort of excitons can appear in hexagonal (wurtzit type) semiconductors due to strong hybridization of the conduction band states and d impurity states. In tetrahedral (zinc blende) semiconductors this hybridization is strongly suppressed due to a symmetry consideration. This model allows one to explain striking differences measured in the exciton spectra and values of the g-factors of two presumably similar systems ZnS:Ni (zinc blende type) and CdS:Ni (wurtzit type).

Original languageEnglish
Pages (from-to)755-760
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
StatePublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 23 Jul 199528 Jul 1995

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