TY - JOUR
T1 - Interfacial reactions in Ti/SiC layered films with and without thin diffusion barriers
AU - Nathan, M.
AU - Ahearn, J. S.
PY - 1990/6/15
Y1 - 1990/6/15
N2 - Four materials-Al2O3, TiBx, VBx, and TaBx (x < 2)-with thicknesses from 50 to 200 Å were evaluated as interfacial reaction barriers between titanium and SiC in a thin film model system. Two of these materials-Al2O3 and TiBx-show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820°C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and 1000°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is Ti5Si3, regardless of barrier.
AB - Four materials-Al2O3, TiBx, VBx, and TaBx (x < 2)-with thicknesses from 50 to 200 Å were evaluated as interfacial reaction barriers between titanium and SiC in a thin film model system. Two of these materials-Al2O3 and TiBx-show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820°C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and 1000°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is Ti5Si3, regardless of barrier.
UR - http://www.scopus.com/inward/record.url?scp=0025448165&partnerID=8YFLogxK
U2 - 10.1016/0921-5093(90)90127-O
DO - 10.1016/0921-5093(90)90127-O
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AN - SCOPUS:0025448165
SN - 0921-5093
VL - 126
SP - 225
EP - 230
JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
IS - 1-2
ER -