InP surface states and reduced surface recombination velocity

L. J. Brillson, Y. Shapira, A. Heller

Research output: Contribution to journalArticlepeer-review

Abstract

Surface photovoltage and Auger electron spectroscopy studies of ultrahigh vacuum cleaved (110) and chemically treated (110) InP reveal direct optical transitions to and from surface states in the band gap for a wide variety of surface conditions. These states correlate with reported Fermi level pinning behavior but cannot account for the unique reduction in surface recombination velocity at KAg(CN)-2 treated surfaces. This reduction is identified instead with formation of a surface layer which excludes ambient-induced recombination states.

Original languageEnglish
Pages (from-to)174-176
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number2
DOIs
StatePublished - 1983
Externally publishedYes

Fingerprint

Dive into the research topics of 'InP surface states and reduced surface recombination velocity'. Together they form a unique fingerprint.

Cite this