Inhomogeneous transport regime in disordered materials

Morrel H. Cohen*, Joshua Jortner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We propose the existence of an inhomogeneous transport regime in the disordered materials in which a gradual metal-semiconductor transition occurs. This regime is sub-divided into pseudometallic and pseudosemiconducting parts by a percolation threshold. On the basis of an effective-medium theory, we propose that the pseudometallic regime falls in the density range 8.2-9.3 g/cm3 in liquid Hg and in the temperature range 1200°K to below 670°K in liquid Te.

Original languageEnglish
Pages (from-to)699-702
Number of pages4
JournalPhysical Review Letters
Issue number15
StatePublished - 1973


Dive into the research topics of 'Inhomogeneous transport regime in disordered materials'. Together they form a unique fingerprint.

Cite this