Infrared radiometry for monitoring temperature of photoresist during dry etching

Yair Dankner*, S. Simhony, Y. Shneider, A. Katzir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature of a thin photoresist layer on a silicon wafer was measured in situ and controlled during a dry etching process by using a silver halide optical fiber noncontact thermometer. We were able to monitor and control the photoresist temperature to within 2°C of a present value. This may be used to prevent cross linking and deterioration of the photoresist during dry processing of semiconductors.

Original languageEnglish
Pages (from-to)1999-2001
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number14
DOIs
StatePublished - 1993

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