Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films

Keyphrases

• Microstructure 100%
• Epitaxially Grown 100%
• Electron Beam Evaporation 100%
• Nanocrystalline 100%
• Single-crystalline Films 100%
• Ti Thin Film 100%
• Evaporation Parameter 100%
• Sodium Chloride 66%
• SiNx 66%
• Sapphire 66%
• Sapphire Substrate 66%
• Orientation Relationship 66%
• Film Thickness 33%
• Silicon Nitride 33%
• Film Substrate 33%
• Deposition Temperature 33%
• Deposition Rate 33%
• Transmission Electron Microscopy 33%
• Surface Energy 33%
• Epitaxial 33%
• Single-crystalline 33%
• X Ray Diffraction 33%
• Electron Backscatter Diffraction 33%
• Si Substrate 33%
• Deposition Conditions 33%
• Resistivity Measurement 33%
• Microstructure Evolution 33%
• Texture Evolution 33%
• Plane Orientation 33%
• Substrate Deposition 33%
• Substrate Temperature 33%
• Four-point Probe 33%
• C-plane Sapphire 33%
• Total Strain Energy 33%
• Methods Reporting 33%
• Total Surface Energy 33%
• Nanocrystalline Films 33%
• Thin Film Growth Modes 33%
• Titania Thin Film 33%

Engineering

• Microstructure 100%
• Thin Films 100%
• Nanocrystalline 100%
• Sapphire Substrate 50%
• Strain Energy 25%
• Transmissions 25%
• Energy Surface 25%
• Deposition Rate 25%
• Nitride 25%
• Ray Diffraction 25%
• Deposition Condition 25%
• Microstructure Evolution 25%
• Growth Mode 25%
• Substrate Temperature 25%
• Plane Surface 25%
• Probe Point 25%
• Deposited Film 25%
• Deposition Temperature 25%
• Thin Film Growth 25%
• Texture Evolution 25%

Material Science

• Film 100%
• Nanocrystalline 100%
• Thin Films 100%
• Crystalline Material 80%
• Sapphire 80%
• Silicon Nitride 20%
• Film Thickness 20%
• Electrical Resistivity 20%
• Surface Energy 20%
• X-Ray Diffraction 20%
• Transmission Electron Microscopy 20%
• Titanium 20%
• Electron Backscatter Diffraction 20%
• Thin Film Growth 20%