Inelastic tunneling effects on noise properties of molecular junctions

Keyphrases

• Electron-phonon Interaction 100%
• Inelastic Tunneling 100%
• Molecular Junctions 100%
• Noise Properties 100%
• Tunneling Effect 100%
• Noise Spectrum 66%
• Electron-phonon Coupling 66%
• Diagnostic Tool 33%
• One-level 33%
• Free Electrons 33%
• Weak Coupling Regime 33%
• Zero Frequency 33%
• Thermal Environment 33%
• Drain Bias 33%
• Drain Voltage 33%
• Gate Voltage 33%
• Phonon Bath 33%
• Vibrational Modes 33%
• Noisy Data 33%
• Sidebands 33%
• Electron Reservoir 33%
• Scanning Tunneling Microscopy 33%
• Frequency Noise 33%
• Current Noise 33%
• Fano Factor 33%
• Noise Amplitude 33%
• Noise Study 33%
• Vibrational Degree of Freedom 33%
• Phonon Sideband 33%

Engineering

• Tunnel Construction 100%
• Phonon Interaction 100%
• Noise Spectra 66%
• Sidebands 66%
• Degree of Freedom 33%
• Scanning Tunneling Microscopy 33%
• Zero Frequency 33%
• Molecular Level 33%
• Simple Model 33%
• Drain Voltage 33%
• Gate Voltage 33%
• Frequency Noise 33%
• Drain Bias 33%
• Noise Amplitude 33%
• Thermal Environment 33%
• Free Electron 33%

Physics

• Phonon 100%
• Electron Phonon Interactions 75%
• Noise Spectra 50%
• Free Electron 25%
• Thermal Environment 25%
• Scanning Tunneling Microscopy 25%
• Degree of Freedom 25%