TY - GEN
T1 - Inductance considerations of on-chip interconnections for best electrostatic discharge protection performance
AU - Sofer, Sergey
AU - Fefer, Yefim
AU - Shapira, Yoram
PY - 2006
Y1 - 2006
N2 - The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design.
AB - The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design.
UR - http://www.scopus.com/inward/record.url?scp=34250659814&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2006.251020
DO - 10.1109/IPFA.2006.251020
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AN - SCOPUS:34250659814
SN - 1424402069
SN - 9781424402069
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 158
EP - 162
BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Y2 - 3 July 2006 through 7 July 2006
ER -