In situ resistance of Y1Ba2Cu3O x films during anneal

A. Davidson; A. Palevski; M. J. Brady; R. B. Laibowitz; R. Koch; M. Scheuermann; C. C. Chi

doi:10.1063/1.99037

In situ resistance of Y₁Ba₂Cu₃O _x films during anneal

A. Davidson^*, A. Palevski, M. J. Brady, R. B. Laibowitz, R. Koch, M. Scheuermann, C. C. Chi

^*Corresponding author for this work

IBM

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Measurements of electrical resistance of thin films of the high-temperature superconductor Y₁Ba₂Cu₃O_x have been carried out between 100 and 800°C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order-disorder transition of oxygen in the one-dimensional Cu-O chains.

Original language	English
Pages (from-to)	157-159
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.99037
State	Published - 1988
Externally published	Yes

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title = "In situ resistance of Y1Ba2Cu3O x films during anneal",

abstract = "Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3Ox have been carried out between 100 and 800°C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order-disorder transition of oxygen in the one-dimensional Cu-O chains.",

author = "A. Davidson and A. Palevski and Brady, {M. J.} and Laibowitz, {R. B.} and R. Koch and M. Scheuermann and Chi, {C. C.}",

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T1 - In situ resistance of Y1Ba2Cu3O x films during anneal

AU - Davidson, A.

AU - Palevski, A.

AU - Brady, M. J.

AU - Laibowitz, R. B.

AU - Koch, R.

AU - Scheuermann, M.

AU - Chi, C. C.

PY - 1988

Y1 - 1988

N2 - Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3Ox have been carried out between 100 and 800°C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order-disorder transition of oxygen in the one-dimensional Cu-O chains.

AB - Measurements of electrical resistance of thin films of the high-temperature superconductor Y1Ba2Cu3Ox have been carried out between 100 and 800°C, and in the range between roughly 0.1 and 1 atm of ambient oxygen. Results are reported for both quick and slow heating, and also for sudden changes in oxygen partial pressure. At constant temperature we observe that the response to the oxygen partial pressure is both quick and reversible. We show evidence that quick heating is preferable, and we also observe features in the resistance similar to those reported in bulk samples and interpreted as an order-disorder transition of oxygen in the one-dimensional Cu-O chains.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

In situ resistance of Y₁Ba₂Cu₃O _x films during anneal

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