TY - JOUR
T1 - In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces
AU - Fefer, E.
AU - Kronik, L.
AU - Leibovitch, M.
AU - Shapira, Yoram
AU - Riedl, W.
N1 - Funding Information:
The researchw as partiallys upportedb y a grant from the Israeli NationalC ouncilfor R&D and the BMFT, GermanyE. .F. wishest o thankt he Eshkol Foundation(M inistryo f Sciencea ndthe Arts) for a doctorasl cholarship.
PY - 1996/9
Y1 - 1996/9
N2 - A simple method for in-situ distinction between the effect of dipole formation/annihilation and charge transfer to/from surface gap states on the semiconductor work function is described. The technique is based on simultaneous monitoring of the work function and photovoltage at the semiconductor surface. The approach is illustrated by experiments performed on single crystalline InP(100) surfaces and polycrystalline Cu(In,Ga)Se 2 .
AB - A simple method for in-situ distinction between the effect of dipole formation/annihilation and charge transfer to/from surface gap states on the semiconductor work function is described. The technique is based on simultaneous monitoring of the work function and photovoltage at the semiconductor surface. The approach is illustrated by experiments performed on single crystalline InP(100) surfaces and polycrystalline Cu(In,Ga)Se 2 .
UR - http://www.scopus.com/inward/record.url?scp=4243049931&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(96)00121-3
DO - 10.1016/S0169-4332(96)00121-3
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AN - SCOPUS:4243049931
SN - 0169-4332
VL - 104-105
SP - 61
EP - 67
JO - Applied Surface Science
JF - Applied Surface Science
ER -