In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces

E. Fefer, L. Kronik, M. Leibovitch, Yoram Shapira*, W. Riedl

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A simple method for in-situ distinction between the effect of dipole formation/annihilation and charge transfer to/from surface gap states on the semiconductor work function is described. The technique is based on simultaneous monitoring of the work function and photovoltage at the semiconductor surface. The approach is illustrated by experiments performed on single crystalline InP(100) surfaces and polycrystalline Cu(In,Ga)Se 2 .

Original languageEnglish
Pages (from-to)61-67
Number of pages7
JournalApplied Surface Science
Volume104-105
DOIs
StatePublished - Sep 1996

Funding

FundersFunder number
Israeli NationalC ouncilfor R&D
Bundesministerium für Forschung und Technologie

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