TY - JOUR
T1 - In-situ measurement of the strain relaxation of GaN nanograins during X-ray irradiation
AU - Choe, Hyeokmin
AU - Lee, Sanghwa
AU - Sohn, Yuri
AU - Kim, Chinkyo
PY - 2008
Y1 - 2008
N2 - GaN nanograins were grown on a c-plane sapphire substrate and their strain relaxation due to x-ray irradiation was investigated in-situ by utilizing synchrotron xray scattering. The GaN nanograins were constantly exposed to the synchrotron X-ray and θ-2θ scans through the (002) Bragg peak of GaN were repeatedly carried out during the irradiation. The Bragg peak of the compressively strained GaN nanograins gradually shifted toward higher angle, which implies that the GaN nanograins in compressive strain experienced strain relaxation during x-ray irradiation.
AB - GaN nanograins were grown on a c-plane sapphire substrate and their strain relaxation due to x-ray irradiation was investigated in-situ by utilizing synchrotron xray scattering. The GaN nanograins were constantly exposed to the synchrotron X-ray and θ-2θ scans through the (002) Bragg peak of GaN were repeatedly carried out during the irradiation. The Bragg peak of the compressively strained GaN nanograins gradually shifted toward higher angle, which implies that the GaN nanograins in compressive strain experienced strain relaxation during x-ray irradiation.
UR - http://www.scopus.com/inward/record.url?scp=77951231381&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778593
DO - 10.1002/pssc.200778593
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???
AN - SCOPUS:77951231381
SN - 1862-6351
VL - 5
SP - 1699
EP - 1701
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -