In situ evaluation of plane plasma

G. Golan, A. Axelevitch, N. Croitoru, A. Inberg, B. Gorenstein

Research output: Contribution to journalArticlepeer-review

Abstract

Low-pressure plane plasma discharge is a novel technique for thin film growth. It makes possible fine control of most of the sputtering parameters, as well as supporting a high growth rate. A low-pressure plane argon plasma was obtained in a triode sputtering system. The in situ non-static conditions of the plane plasma behaviour during sputtering were investigated. The electron temperature and ion concentration of the plane plasma were measured using a Langmuir probe technique. A further study was made of the reciprocal arrangement of the sputtering target and the reference ring electrode, which affects the process by causing re-sputtering or dry etching of the growing layers. All of the sputtering experiments were done using pure Ag targets. The sheet resistivity of the deposited silver films was measured using a four-point probe method.

Original languageEnglish
Pages (from-to)9-18
Number of pages10
JournalPlasma Devices and Operations
Volume13
Issue number1
DOIs
StatePublished - Mar 2005

Keywords

  • Langmuir probe
  • Plane plasma discharge
  • Silver thin film
  • Triode sputtering

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