Keyphrases
High-resolution Electron Energy Loss Spectroscopy (HREELS)
100%
Elevated Temperature
100%
Electronic Structure
100%
Si(111)
100%
Interface States
100%
Substrate Temperature
100%
Overlayer
100%
Growth Rate
50%
Substrate Surface
50%
Room Temperature
50%
Temperature Range
50%
Auger Electron Spectroscopy
50%
Surface Structure
50%
Interface Geometry
50%
State Behavior
50%
Island Shape
50%
Layer Growth
50%
Three-dimensional Island
50%
Inverse Photoemission Spectroscopy
50%
Low Energy Electron Diffraction
50%
Uniform Layer
50%
State Characteristics
50%
Sticking Probability
50%
Si Phase
50%
Stranski-Krastanov
50%
Engineering
Monolayer
100%
Energy Dissipation
66%
Electron Energy
66%
Elevated Temperature
66%
Interface State
66%
Substrate Temperature
66%
Substrate Surface
33%
Room Temperature
33%
Temperature Range
33%
Structure Surface
33%
Photoemission
33%
Energy Electron Diffraction
33%
State Behavior
33%
State Characteristic
33%
Sticking Probability
33%
Physics
Electron Energy
100%
Electronic Structure
100%
Photoelectric Emission
50%
Room Temperature
50%
Electron Spectroscopy
50%
Electron Diffraction
50%
Material Science
Electronic Structure
100%
Monolayers
100%
Electron Energy Loss Spectrometry
66%
Photoemission Spectroscopy
33%
Auger Electron Spectroscopy
33%
Surface Structure
33%
Low-Energy Electron Diffraction
33%