In overlayers on Si(111)7×7: Growth and evolution of the electronic structure

Helmut Fner*, Svetlozar L. Surnev, Yoram Shapira, Falko P. Netzer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

The formation of thin overlayers of In on Si(111)7×7 substrate surfaces has been studied in the temperature range from room temperature to ∼500°C by Auger-electron spectroscopy, low-energy electron diffraction, direct and inverse photoemission spectroscopy (UPS and IPES), and electron-energy-loss spectroscopy (EELS). Up to In coverages FTHETAIn of about 1-2 monolayers (ML), uniform layer growth prevails irrespective of the substrate temperature, but ordered surface structures can only be observed at elevated temperatures. Beyond FTHETAIn1-2 ML, three-dimensional island clustering according to the Stranski-Krastanov mechanism appears, but the growth rate appears to be greatly reduced for substrate temperatures >300°C. This may be attributed either to a low sticking probability of In on the ordered (1×1)R30°In-Si phase, which develops at T>300°C for FTHETAIn1-2 ML, or to drastically different In island shapes at elevated temperatures. The ordered In-Si reconstructions (3 × 3) R30°, (4×1), and (1×1)R30°have been characterized by UPS, IPES, and EELS, and distinctly different interface state characteristics have been obtained for the various surfaces; these differences are particularly striking in the IPES spectra. It is suggested that the different interface state behavior reflects different local bonding geometries of In atoms at the various interfaces, and the data are discussed in terms of plausible models for interface geometries.

Original languageEnglish
Pages (from-to)10940-10949
Number of pages10
JournalPhysical Review B-Condensed Matter
Volume48
Issue number15
DOIs
StatePublished - 1993
Externally publishedYes

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