Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

Ido Ashuah; Eitan N. Shauly; Yosi Shacham-Diamand

doi:10.1109/TSM.2009.2017655

Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

Ido Ashuah^*, Eitan N. Shauly, Yosi Shacham-Diamand

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.

Original language	English
Article number	4909526
Pages (from-to)	305-316
Number of pages	12
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	22
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2009.2017655
State	Published - May 2009

Keywords

AFM
P-type polysilicon
RTP
SRIM
TCR
X-ray diffractometer
XRD
amorphization
atomic force microscope
co-implantation
grain boundary
grains regrowth
rapid thermal anneal
recrystalization
sheet resistance
temperature coefficient of resistance
thermawave

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10.1109/TSM.2009.2017655

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title = "Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors",

abstract = "This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.",

keywords = "AFM, P-type polysilicon, RTP, SRIM, TCR, X-ray diffractometer, XRD, amorphization, atomic force microscope, co-implantation, grain boundary, grains regrowth, rapid thermal anneal, recrystalization, sheet resistance, temperature coefficient of resistance, thermawave",

author = "Ido Ashuah and Shauly, {Eitan N.} and Yosi Shacham-Diamand",

year = "2009",

month = may,

doi = "10.1109/TSM.2009.2017655",

language = "אנגלית",

volume = "22",

pages = "305--316",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

AU - Ashuah, Ido

AU - Shauly, Eitan N.

AU - Shacham-Diamand, Yosi

PY - 2009/5

Y1 - 2009/5

N2 - This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.

AB - This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.

KW - AFM

KW - P-type polysilicon

KW - RTP

KW - SRIM

KW - TCR

KW - X-ray diffractometer

KW - XRD

KW - amorphization

KW - atomic force microscope

KW - co-implantation

KW - grain boundary

KW - grains regrowth

KW - rapid thermal anneal

KW - recrystalization

KW - sheet resistance

KW - temperature coefficient of resistance

KW - thermawave

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U2 - 10.1109/TSM.2009.2017655

DO - 10.1109/TSM.2009.2017655

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AN - SCOPUS:67649352507

SN - 0894-6507

VL - 22

SP - 305

EP - 316

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 2

M1 - 4909526

ER -

Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

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Keywords

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