Improvement of temperature coefficient of resistance by co-implantation of argon or xenon or fluorine in boron implanted polysilicon resistors

Ido Ashuah*, Eitan N. Shauly, Yosi Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper proposes a new method to decrease the absolute value of temperature coefficient of resistance (TCR) in P-type boron implanted polysilicon resistors, at a given intermediate sheet resistance values, by selecting an optimized combination of boron doping implant conditions with co-implantation conditions. The co-implantation ion species that were investigated are fluorine, argon and xenon. Each of the co-implantation species was studied at three different co-implantation conditions and two different boron doping implant conditions of dose and energy.

Original languageEnglish
Article number4909526
Pages (from-to)305-316
Number of pages12
JournalIEEE Transactions on Semiconductor Manufacturing
Volume22
Issue number2
DOIs
StatePublished - May 2009

Keywords

  • AFM
  • P-type polysilicon
  • RTP
  • SRIM
  • TCR
  • X-ray diffractometer
  • XRD
  • amorphization
  • atomic force microscope
  • co-implantation
  • grain boundary
  • grains regrowth
  • rapid thermal anneal
  • recrystalization
  • sheet resistance
  • temperature coefficient of resistance
  • thermawave

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