Impact of radiation and electron trapping on minority carrier transport in p -Ga2O3

Sushrut Modak, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, Ekaterine Chikoidze, Xinyi Xia, Fan Ren, Stephen J. Pearton, Arie Ruzin, Leonid Chernyak*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Highly resistive undoped p-type gallium oxide samples were subjected to cumulative proton irradiation with energies ranging from 25 to 70 keV and doses in the 1.6 × 1014-3.6 × 1014 cm-2 range. Proton irradiation resulted in up to a factor of 2 reduction of minority electron diffusion length in the samples for temperatures between ∼300 and 400 K. Electron injection into the samples under test using a scanning electron microscope beam leads to pronounced elongation of diffusion length beyond the pre-irradiation values, thus demonstrating stable (days after injection) recovery of adverse radiation impact on minority carrier transport. The activation energy of 91 meV estimated from the temperature dependent diffusion length vs electron injection duration experiments is likely related to the local potential barrier height for native defects associated with the phenomenon of interest.

Original languageEnglish
Article number233503
JournalApplied Physics Letters
Volume120
Issue number23
DOIs
StatePublished - 6 Jun 2022

Funding

FundersFunder number
NSF DMR1856662
US-Israel BSF2018010
National Science FoundationECCS1802208, ECCS2127916
U.S. Department of Defense
Defense Threat Reduction AgencyHDTRA1-20-2-0002
North Atlantic Treaty OrganizationG5748
University of Central Florida
Agence Nationale de la RechercheCE-50 N0015-01
Tel Aviv University

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