Impact of polishing on crystallinity and static performance of Cd1−xZnxTe

A. Brovko; A. Adelberg; L. Chernyak; S. Gorfman; A. Ruzin

doi:10.1016/j.nima.2020.164568

Impact of polishing on crystallinity and static performance of Cd_1−xZn_xTe

A. Brovko, A. Adelberg, L. Chernyak, S. Gorfman, A. Ruzin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.

Original language	English
Article number	164568
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	984
DOIs	https://doi.org/10.1016/j.nima.2020.164568
State	Published - 21 Dec 2020

Funding

Funders	Funder number
Israeli branch of GE Healthcare
Ministry of Science, Technology and Space	2018010, 3-12951
United States-Israel Binational Science Foundation
Israel Science Foundation	2247/18

Keywords

CZT
CdZnTe
Compound Semiconductors
Gamma-ray detectors
Semiconductor detectors

Access to Document

10.1016/j.nima.2020.164568

Cite this

@article{68bc62296d8442598744774b1688840b,

title = "Impact of polishing on crystallinity and static performance of Cd1−xZnxTe",

abstract = "This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.",

keywords = "CZT, CdZnTe, Compound Semiconductors, Gamma-ray detectors, Semiconductor detectors",

author = "A. Brovko and A. Adelberg and L. Chernyak and S. Gorfman and A. Ruzin",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = dec,

day = "21",

doi = "10.1016/j.nima.2020.164568",

language = "אנגלית",

volume = "984",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Impact of polishing on crystallinity and static performance of Cd1−xZnxTe

AU - Brovko, A.

AU - Adelberg, A.

AU - Chernyak, L.

AU - Gorfman, S.

AU - Ruzin, A.

PY - 2020/12/21

Y1 - 2020/12/21

N2 - This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.

AB - This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.

KW - CZT

KW - CdZnTe

KW - Compound Semiconductors

KW - Gamma-ray detectors

KW - Semiconductor detectors

UR - http://www.scopus.com/inward/record.url?scp=85091479752&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2020.164568

DO - 10.1016/j.nima.2020.164568

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85091479752

SN - 0168-9002

VL - 984

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

M1 - 164568

ER -