TY - JOUR
T1 - Impact of polishing on crystallinity and static performance of Cd1−xZnxTe
AU - Brovko, A.
AU - Adelberg, A.
AU - Chernyak, L.
AU - Gorfman, S.
AU - Ruzin, A.
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/12/21
Y1 - 2020/12/21
N2 - This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.
AB - This article focuses on the impact of polishing of CdZnTe crystals on the electrical properties of the resulting detectors. It is shown that the standard rough polishing of the crispy crystals by 5μm size alumina powder increases the effective surface area by a factor 3 and introduces in-depth defects. The defects affect the static current–voltage dependence and were also observed by crystallographic characterization. The depth of the defected layer was determined to be 20–25μm by a consecutive stripping of surface layers. The crystallographic results, indicating structural imperfections, fully correspond to the electrical characteristics. The results are explained by limited CdZnTe/In contact recombination velocity and enhanced generation–recombination velocity of the defected (polycrystalline) layer. The hypothesis was corroborated by a finite element computation.
KW - CZT
KW - CdZnTe
KW - Compound Semiconductors
KW - Gamma-ray detectors
KW - Semiconductor detectors
UR - http://www.scopus.com/inward/record.url?scp=85091479752&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2020.164568
DO - 10.1016/j.nima.2020.164568
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AN - SCOPUS:85091479752
SN - 0168-9002
VL - 984
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
M1 - 164568
ER -