Impact of mesa and planar processes on the radiation hardness of Si detectors

G. Casse; M. Glaser; E. Grigoriev; F. Lemeilleur; A. Ruzin; B. Sopko; A. Taffard

Impact of mesa and planar processes on the radiation hardness of Si detectors

G. Casse^*, M. Glaser, E. Grigoriev, F. Lemeilleur, A. Ruzin, B. Sopko, A. Taffard

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 × 5 mm² pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.

Original language	English
Pages (from-to)	1-12
Number of pages	12
Journal	La Rivista del Nuovo Cimento
Volume	112
Issue number	1-2
State	Published - Jan 1999
Externally published	Yes

Cite this

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abstract = "Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 × 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.",

author = "G. Casse and M. Glaser and E. Grigoriev and F. Lemeilleur and A. Ruzin and B. Sopko and A. Taffard",

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AU - Casse, G.

AU - Glaser, M.

AU - Grigoriev, E.

AU - Lemeilleur, F.

AU - Ruzin, A.

AU - Sopko, B.

AU - Taffard, A.

PY - 1999/1

Y1 - 1999/1

N2 - Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 × 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.

AB - Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 × 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.

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JF - La Rivista del Nuovo Cimento

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ER -

Impact of mesa and planar processes on the radiation hardness of Si detectors

Abstract

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