Impact of mesa and planar processes on the radiation hardness of Si detectors

G. Casse, M. Glaser, E. Grigoriev, F. Lemeilleur, A. Ruzin, B. Sopko, A. Taffard

Research output: Contribution to journalArticlepeer-review

Abstract

Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 × 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalLa Rivista del Nuovo Cimento
Volume112
Issue number1-2
StatePublished - Jan 1999
Externally publishedYes

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