@article{619ac93e830d456c8ce3102c960e6e99,
title = "Impact of electron injection on carrier transport and recombination in unintentionally doped GaN",
abstract = "The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.",
author = "Sushrut Modak and Leonid Chernyak and Minghan Xian and Fan Ren and Pearton, {Stephen J.} and Sergey Khodorov and Igor Lubomirsky and Arie Ruzin and Zinovi Dashevsky",
note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = aug,
day = "28",
doi = "10.1063/5.0017742",
language = "אנגלית",
volume = "128",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "8",
}