Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Iddo Amit, Nari Jeon, Lincoln J. Lauhon, Yossi Rosenwaks*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 1019 cm-3) shell surrounding the NW can screen the junctions built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.

Original languageEnglish
Pages (from-to)128-134
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number1
DOIs
StatePublished - 13 Jan 2016

Keywords

  • Kelvin probe force microscopy
  • diode
  • dopant compensation
  • doping
  • nanowire
  • vapor-liquid-solid growth

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