Impact ionization measurements and modeling for power PHEMT

Tamara Baksht, Sanelia Solodky, M. Leibovitch, G. Bunin, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

A systematic study of impact ionization in pseudo-morphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement procedure makes it possible to define a safe transistor operation region is proposed. Impact ionization in the channel is parameterized by specific gate current and voltage values. Temperature-dependent measurements are shown to provide distinction between the impact ionization current and the thermionic field emission current. A methodology for defining an optimum vertical structure and a lateral layout for a given application and operational conditions is developed. Empirical models for optimum lateral layout for a power application were developed based on a statistical "Device Zoo" approach. The results point to an optimal gate-to-drain distance for minimum impact ionization current.

Original languageEnglish
Pages (from-to)479-485
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume50
Issue number2
DOIs
StatePublished - Feb 2003

Keywords

  • Breakdown
  • Empirical models
  • Impact ionization
  • Pseudomorphic high electron mobility transistors (PHEMT)

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