TY - GEN
T1 - HTRB Stress Effects on 0.15 μm AlGaN/GaN HEMT Performance
AU - Raja, P. Vigneshwara
AU - Nallatamby, Jean Christophe
AU - Bouslama, Mohamed
AU - Jacquet, Jean Claude
AU - Sommet, Raphael
AU - Chang, Christophe
AU - Lambert, Benoit
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper describes the high temperature reverse bias (HTRB) stress effects on 0.15 μm AlGaN/GaN high-electron mobility transistors (HEMTs) with Fe-doped buffer. The HEMTs were stressed to OFF-state bias (VGS = -7 V, VDS = 25 V) at 175°C for 1000 hours of duration. The subsequent degradation in the drain current is analyzed. The changes in IG-VG at VDS= 0 V (emulating gate Schottky diode leakage) are investigated before and after the stress to inspect the Schottky gate interface quality. The gate leakage current evolutions are further examined with the VG and VD sweeps. After ageing test, the deviation in the emission rate of Fe-related trap at Ec - 0.5 eV (located in buffer) is quantified by means of low-frequency (LF) output-admittance (Y22) and drain current transient (DCT) spectroscopy. Moreover, the drift in the output power (Pout) during first interim measurement of stressed HEMT is evaluated, with the supporting TCAD simulations. These preliminary HTRB test results are useful to understand the fundamental failure mechanisms of the HEMT due to the ageing in actual operating conditions.
AB - This paper describes the high temperature reverse bias (HTRB) stress effects on 0.15 μm AlGaN/GaN high-electron mobility transistors (HEMTs) with Fe-doped buffer. The HEMTs were stressed to OFF-state bias (VGS = -7 V, VDS = 25 V) at 175°C for 1000 hours of duration. The subsequent degradation in the drain current is analyzed. The changes in IG-VG at VDS= 0 V (emulating gate Schottky diode leakage) are investigated before and after the stress to inspect the Schottky gate interface quality. The gate leakage current evolutions are further examined with the VG and VD sweeps. After ageing test, the deviation in the emission rate of Fe-related trap at Ec - 0.5 eV (located in buffer) is quantified by means of low-frequency (LF) output-admittance (Y22) and drain current transient (DCT) spectroscopy. Moreover, the drift in the output power (Pout) during first interim measurement of stressed HEMT is evaluated, with the supporting TCAD simulations. These preliminary HTRB test results are useful to understand the fundamental failure mechanisms of the HEMT due to the ageing in actual operating conditions.
KW - AlGaN/GaN HEMT
KW - HTRB
KW - gate leakage
KW - power drift
KW - reliability
KW - trap
UR - http://www.scopus.com/inward/record.url?scp=85149299824&partnerID=8YFLogxK
U2 - 10.1109/NEMO51452.2022.10038964
DO - 10.1109/NEMO51452.2022.10038964
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AN - SCOPUS:85149299824
T3 - 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022
BT - 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022
Y2 - 6 July 2022 through 8 July 2022
ER -