TY - JOUR
T1 - High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells
AU - Barkay, Z.
AU - Grunbaum, E.
AU - Shapira, Y.
AU - Wilshaw, P.
AU - Barnham, K.
AU - Bushnell, D. B.
AU - Ekins-Daukes, N. J.
AU - Mazzer, M.
PY - 2004
Y1 - 2004
N2 - We have studied the electric field distribution in p-i-n structures with multi-quantum wells (MQW) using the method of dopant (ionization potential) contrast in high resolution (with a cold field emission electron gun) scanning electron microscopy (HRSEM). The samples are GaAs-based ternary compound layer structures used for high-efficiency solar cells, consisting of p-i-n junctions, in which various numbers of InGaAs quantum wells have been inserted into the intrinsic (undoped) region. The results show an increasing secondary electron signal across the n, i and p regions while the series of 8 nm wide quantum wells and their corresponding barriers within the i-region are clearly distinguished. The field distribution is obtained by differentiating the dopant contrast curves. This study highlights the capability of HRSEM to provide information on active doping and associated electric fields within electronic nanostructures.
AB - We have studied the electric field distribution in p-i-n structures with multi-quantum wells (MQW) using the method of dopant (ionization potential) contrast in high resolution (with a cold field emission electron gun) scanning electron microscopy (HRSEM). The samples are GaAs-based ternary compound layer structures used for high-efficiency solar cells, consisting of p-i-n junctions, in which various numbers of InGaAs quantum wells have been inserted into the intrinsic (undoped) region. The results show an increasing secondary electron signal across the n, i and p regions while the series of 8 nm wide quantum wells and their corresponding barriers within the i-region are clearly distinguished. The field distribution is obtained by differentiating the dopant contrast curves. This study highlights the capability of HRSEM to provide information on active doping and associated electric fields within electronic nanostructures.
UR - http://www.scopus.com/inward/record.url?scp=5044226666&partnerID=8YFLogxK
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AN - SCOPUS:5044226666
SN - 0951-3248
VL - 179
SP - 143
EP - 146
JO - Institute of Physics Conference Series
JF - Institute of Physics Conference Series
T2 - Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference
Y2 - 3 September 2003 through 5 September 2003
ER -