Abstract
An improved lift-off process that, unlike the traditional lift-off process, does not require overhanging resist profiles and thin-films deposition with its potential for poor step coverage is discussed. The parameters controlling the lift-off process have been identified and used to determine the processing window. Aluminum features ranging in size from submicron to millimeter were patterned over surface topography to show the applicability of the process to VLSI metallization.
| Original language | English |
|---|---|
| Pages | 205-211 |
| Number of pages | 7 |
| State | Published - 1986 |
| Externally published | Yes |