@article{c344925f84be4c4e8215ad5a6c337926,
title = "High quality ultrathin Bi 2 Se 3 films on CaF 2 and CaF 2/Si by molecular beam epitaxy with a radio frequency cracker cell",
abstract = "We report a method to fabricate high quality Bi 2 Se 3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With Se-to-Bi ratios close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi 2 Se 3 thin films with smooth surfaces has been achieved on CaF 2 (111) substrates and Si (111) substrates with a thin epitaxial CaF 2 buffer layer (CaF 2/Si). Transport measurements show a characteristic weak-antilocalization magnetoresistance in all the films, with the emergence of a weak-localization contribution in the ultrathin film limit. Quantum oscillations, attributed to the topological surface states have been observed, including in films grown on CaF 2 / Si.",
author = "Li Zhang and Robert Hammond and Merav Dolev and Min Liu and Alexander Palevski and Aharon Kapitulnik",
note = "Funding Information: This work was supported by fundings from FENA and DARPA. Merav Dolev and Alexander Palevski were partially funded by a DoE Seed funding for studying TI. We would like to acknowledge Ann Marshall for her help with TEM. We also thank Ko Munakata, Gerwin Hassink, James Analytis, Garrett Hayes, Malcolm Beasley, Jing Wang, Xiaoliang Qi, Shoucheng Zhang, Nicholas Breznay, Nai-Chang Yeh, and Kang Wang for useful discussions.",
year = "2012",
month = oct,
day = "8",
doi = "10.1063/1.4758466",
language = "אנגלית",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "15",
}