High quality ultrathin Bi 2 Se 3 films on CaF 2 and CaF 2/Si by molecular beam epitaxy with a radio frequency cracker cell

Li Zhang, Robert Hammond, Merav Dolev, Min Liu, Alexander Palevski, Aharon Kapitulnik

Research output: Contribution to journalArticlepeer-review

Abstract

We report a method to fabricate high quality Bi 2 Se 3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With Se-to-Bi ratios close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi 2 Se 3 thin films with smooth surfaces has been achieved on CaF 2 (111) substrates and Si (111) substrates with a thin epitaxial CaF 2 buffer layer (CaF 2/Si). Transport measurements show a characteristic weak-antilocalization magnetoresistance in all the films, with the emergence of a weak-localization contribution in the ultrathin film limit. Quantum oscillations, attributed to the topological surface states have been observed, including in films grown on CaF 2 / Si.

Original languageEnglish
Article number153105
JournalApplied Physics Letters
Volume101
Issue number15
DOIs
StatePublished - 8 Oct 2012

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