High-gain lateral hot-electron device

A. Palevski; C. P. Umbach; M. Heiblum

doi:10.1063/1.101613

High-gain lateral hot-electron device

A. Palevski^*
, C. P. Umbach
, M. Heiblum

^*Corresponding author for this work

IBM

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.

Original language	English
Pages (from-to)	1421-1423
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	14
DOIs	https://doi.org/10.1063/1.101613
State	Published - 1989
Externally published	Yes

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title = "High-gain lateral hot-electron device",

abstract = "A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.",

author = "A. Palevski and Umbach, \{C. P.\} and M. Heiblum",

year = "1989",

doi = "10.1063/1.101613",

language = "אנגלית",

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journal = "Applied Physics Letters",

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AU - Palevski, A.

AU - Umbach, C. P.

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N2 - A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.

AB - A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.

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SN - 0003-6951

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JO - Applied Physics Letters

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High-gain lateral hot-electron device

Abstract

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